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| MITSUBISHI IGBT MODULES CM600HU-24H HIGH POWER SWITCHING USE INSULATED TYPE 2 - M4 NUTS E H A B K L 2 - M8 NUTS N(4 - Mounting Holes) F J G C D E G E C CM TC Measured Point P M Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode High Frequency Operation Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies E C E G Outline Drawing and Circuit Diagram Dimensions A B C D E F G Inches 4.33 3.660.01 3.15 2.440.01 0.53 0.37 0.57 Millimeters 110.0 93.00.25 80.0 62.00.25 13.5 9.5 14.5 Dimensions H J K L M N P Inches 0.96 0.22 1.14 0.85 Millimeters 24.5 5.5 29.0 21.5 34 +1.0/-0.5 6.5 Dia. Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM600HU-24H is a 1200V (VCES), 600 Ampere Single IGBT Module. Type CM Current Rating Amperes 600 VCES Volts (x 50) 24 1.34 +0.04/-0.02 0.26 Dia. 1.02 +0.04/-0.02 26 +1.0/-0.5 Sep.1998 MITSUBISHI IGBT MODULES CM600HU-24H HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (Tc = 25C) Peak Collector Current (Tj 150C) Emitter Current** (Tc = 25C) Peak Emitter Current** Maximum Collector Dissipation (Tc = 25C) Mounting Torque, M8 Main Terminal Mounting Torque, M6 Mounting Mounting Torque, M4 Terminal Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc - - - - Viso CM600HU-24H -40 to 150 -40 to 125 1200 20 600 1200* 600 1200* 3100 8.8~10.8 3.5~4.5 1.3~1.7 600 2500 Units C C Volts Volts Amperes Amperes Amperes Amperes Watts N*m N*m N*m Grams Vrms * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Voltage Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 60mA, VCE = 10V IC = 600A, VGE = 15V, Tj = 25C IC = 600A, VGE = 15V, Tj = 125C Total Gate Charge Emitter-Collector Voltage* VCC = 600V, IC = 600A, VGE = 15V IE = 600A, VGE = 0V Min. - - 4.5 - - - - Typ. - - 6 2.9 2.85 2250 - Max. 2 0.5 7.5 3.7 - - 3.2 Units mA A Volts Volts Volts nC Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switch Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr VCC = 600V, IC = 600A, VGE1 = VGE2 = 15V, RG = 2.1, Resistive Load Switching Operation IE = 600A, diE/dt = -1200A/s IE = 600A, diE/dt = -1200A/s VCE = 10V, VGE = 0V Test Conditions Min. - - - - - - - - - Typ. - - - - - - - - 3.3 Max. 90 31.5 18 300 700 450 350 300 - Units nF nF nF ns ns ns ns ns C Diode Reverse Recovery Time Diode Reverse Recovery Charge Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c)Q Rth(j-c)D Rth(c-f) Test Conditions Per IGBT Module Per FWDi Module Per Module, Thermal Grease Applied Min. - - - Typ. - - 0.015 Max. 0.04 0.06 - Units C/W C/W C/W Sep.1998 MITSUBISHI IGBT MODULES CM600HU-24H HIGH POWER SWITCHING USE INSULATED TYPE OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 1200 COLLECTOR CURRENT, IC, (AMPERES) 960 720 VGE = 20V 11 960 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25oC 1200 15 5 VCE = 10V Tj = 25C Tj = 125C VGE = 15V Tj = 25C Tj = 125C 12 COLLECTOR CURRENT, IC, (AMPERES) 4 3 2 1 720 480 240 10 480 240 0 9 8 0 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 0 0 4 8 12 16 20 0 240 480 720 960 1200 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 104 Tj = 25C 102 Tj = 25C CAPACITANCE, Cies, Coes, Cres, (nF) 8 6 4 2 EMITTER CURRENT, IE, (AMPERES) IC = 1200A Cies IC = 600A 103 101 Coes 102 100 Cres VGE = 0V IC = 240A 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 101 1.0 1.5 2.0 2.5 3.0 3.5 10-1 10-1 100 101 102 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) di/dt = -1200A/sec Tj = 25C Irr REVERSE RECOVERY CURRENT, Irr, (AMPERES) GATE CHARGE, VGE 103 td(off) REVERSE RECOVERY TIME, trr, (ns) 103 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) IC = 600A VCC = 400V 16 12 8 4 VCC = 600V SWITCHING TIME, (ns) tf td(on) 102 tr 102 trr 101 VCC = 600V VGE = 15V RG = 2.1 Tj = 125C 101 101 102 COLLECTOR CURRENT, IC, (AMPERES) 103 101 101 102 EMITTER CURRENT, IE, (AMPERES) 100 103 0 0 800 1600 2400 3200 GATE CHARGE, QG, (nC) Sep.1998 MITSUBISHI IGBT MODULES CM600HU-24H HIGH POWER SWITCHING USE INSULATED TYPE NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth * (NORMALIZED VALUE) 10-3 101 10-2 10-1 100 101 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth * (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 101 10-2 10-1 100 101 100 Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.04C/W 100 Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.06C/W 10-1 10-1 10-1 10-1 10-2 10-2 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 10-3 10-5 TIME, (s) 10-4 10-3 10-3 Sep.1998 |
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